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| SGD02N60 Preliminary data IGBT * Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Avalanche rated Pin 1 Pin 2 Pin 3 G Type C Ordering Code E VCE 600V IC 2A Package SGD02N60 Maximum Ratings Parameter P-TO252 Q67040-A . . . . Symbol Values Unit Collector-emitter voltage Collector-gate voltage RGE = 20 k V CE V CGR 600 V 600 V GE IC Gate-emitter voltage DC collector current TC = 25 C TC = 100 C 20 A 5.5 2 Pulsed collector current, tp = 1 ms TC = 25 C TC = 100 C ICpuls 11 4 E AS Avalanche energy, single pulse IC = 2 A, VCC = 50 V, RGE = 25 L = 1.5 mH, Tj = 25 C mJ 3 P tot Power dissipation TC = 25 C W 30 Semiconductor Group 1 Apr-07-1998 SGD02N60 Preliminary data Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature IEC climatic category, DIN IEC 68-1 Thermal Characteristics Parameter Tj Tstg -55 ... + 150 -55 ... + 150 55 / 150 / 56 C - - Symbol min. Values typ. max. Unit Thermal resistance , junction - case Thermal resistance, junction - ambient ( PCB mount)** RthJC RthJA - 50 4.2 - K/W ** Device on 50mm x 50 mm x 1.5 mm epoxy PCB ( FR-4 ) with 6 cm2 copper area around the heat slug footprint ( one layer, 70 m copper ). PCB is vertical without blown air. Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Collector-emitter breakdown voltage V GE = 0 V, IC = 0.5 mA, Tj = -55 C V (BR)CES V 600 - Gate threshold voltage V GE = VCE, IC = 0.15 mA, Tj = 25 C V GE = VCE, IC = 0.15 mA, Tj = 150 C V GE(th) 3 2 V CE(sat) 4 3 5 - Collector-emitter saturation voltage V GE = 15 V, IC = 2 A, Tj = 25 C V GE = 15 V, IC = 2 A, Tj = 150 C 1.6 ICES 2 2.3 2.5 2.8 A Zero gate voltage collector current V CE = 600 V, V GE = 0 V, Tj = 25 C V CE = 600 V, V GE = 0 V, Tj = 150 C IGES - 20 250 nA Gate-emitter leakage current V GE = 25 V, VCE = 0 V - - 100 Semiconductor Group 2 Apr-07-1998 SGD02N60 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit AC Characteristics Transconductance V CE = 20 V, IC = 2 A gfs S 0.45 1.6 pF 150 190 Input capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz Ciss Output capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz Coss Crss 20 25 Reverse transfer capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz - 10 13 Semiconductor Group 3 Apr-07-1998 SGD02N60 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 150 C Values typ. max. Unit Turn-on delay time V CC = 400 V, V GE = 15 V, IC = 2 A RGon = 118 td(on) ns tr 20 30 Rise time V CC = 400 V, V GE = 15 V, IC = 2 A RGon = 118 td(off) 15 23 Turn-off delay time V CC = 400 V, V GE = 15 V, IC = 2 A RGoff = 118 tf 280 420 Fall time V CC = 400 V, V GE = 15 V, IC = 2 A RGoff = 118 E on 110 165 mJ Total turn-on loss energy * V CC = 400 V, V GE = 15 V, IC = 2 A RGon = 118 , Tj = 150 C E off 0.12 0.16 Total turn-off loss energy V CC = 400 V, V GE = 15 V, IC = 2 A RGoff = 118 , Tj = 150 C QG(on) 0.05 0.065 nC Total Gate Charge V CC = 480 V, V GE = 15 V, IC = 2 A - 14 21 * includes the reverse recovery losses caused by the FWD of the BUP410D Semiconductor Group 4 Apr-07-1998 SGD02N60 Preliminary data Package Outlines Dimensions in mm Weight: Semiconductor Group 5 Apr-07-1998 |
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